The most important electrical ratings for rectifier diodes are:
- Peak repetitive reverse voltage VRRM
- Average rectified forward current IO
- Peak repetitive forward surge current IFSM
Despite their slow recovery time, standard PN junction rectifiers have lower reverse currents, can operate at higher junction temperatures, and can withstand higher inverse voltages than faster rectifiers designed to overcome this speed limitation.
Three types of fast silicon rectifiers perform more efficiently at the higher-frequency switching rates:
- Fast-recovery rectifiers.
- Ultrafast- or superfast-recovery rectifiers.
- Schottky rectifiers.
FAST-RECOVERY RECTIFIERS
A fast-recovery rectifier is a PN junction rectifier made by diffusing gold atoms into a silicon substrate. The gold atoms accelerate the recombination of minority carriers to reduce reverse recovery time. These rectifiers can be switched in 200 to 750 ns. They have current ratings of 1 to 50 A and voltage ratings to 1200 V. Forward voltage drop is typically 1.4 V, higher than the 1.1 to 1.3 V of the standard PN junction. The maximum allowable junction temperature is about 25°C. This value is lower than that for a standard PN junction. The maximum reverse voltage for a fast-recovery rectifier is about 600 V.
ULTRAFAST- OR SUPERFAST-RECOVERY RECTIFIERS
An ultrafast- or superfast-recovery diode is a PN junction rectifier whose reverse recovery time is between 25 and 100 ns. Gold or platinum is also diffused into the silicon wafers from which the rectifier is made to speed up minority carrier recombination. These rectifiers are specified for power supplies with output voltages of 12, 24, and 48 V.
SCHOTTKY RECTIFIERS
A Schottky rectifier has a metal-to-semiconductor junction rather than a PN junction, so it does not have minority charge carriers. The die is in direct contact with one metal electrode, so recovery time, although not specified, is typically less than 10 ns. Recovery current is principally caused by junction capacitance. Schottky rectifiers provide lower forward voltages (VF) than the PN rectifiers (0.4 to 0.8 V vs. 1.1 to 1.3 V). Hence power dissipation is lower and efficiency is higher. One drawback of the Schottky rectifier is its low blocking voltage, typically 35 to 50 V. However, Schottky rectifiers with maximum blocking voltages of 200 V are available. These rectifiers require transient protection, and they have inherently higher leakage current (IRRM) than PN junction rectifiers. This makes them more susceptible to destruction by overheating (thermal runaway). Schottky rectifiers can be paralleled in the output stages of switching power supplies, where they are usually used with output terminals rated for 5 V or less.